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| SI4828DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0135 @ VGS = 10 V 0.0175 @ VGS = 4.5 V ID (A) 7.5 6.5 9.8 8.5 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter P Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 "20 Symbol S bl VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State Steady State Unit Ui V 7.5 6 30 1.8 2 1.78 5.8 4.6 9.8 7.8 40 7.5 6 A 1.06 1.17 0.75 -55 to 150 1.8 2 1.28 1.06 1.17 0.75 W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter P Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71181 S-00983--Rev. A, 15-May-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady-State Steady-State Channel-2 Typ 53 89 34 Symbol S bl RthJA RthJC Typ 55 89 36 Max 62.5 107 45 Max 62.5 107 42 Unit Ui _C/W 1 SI4828DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V Z G Vl DiC Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 9.8 A VGS = 4.5 V, ID = 6.5 A VGS = 4.5 V, ID = 8.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 7.5 A VDS = 15 V, ID = 9.8 A IS = 1.8 A, VGS = 0 V IS = 1.8 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.018 0.011 0.024 0.0145 17 30 0.72 0.72 1.1 1.1 0.022 0.0135 0.030 0.0175 S W 0.8 1.0 100 100 1 1 15 15 A A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Leakage nA V Dynamicb Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.8 A, di/dt = 100 A/ms IF = 1.8 A, di/dt = 100 mA/ms Channel 1 Ch l Channel-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 15 V RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel 1 Channel-1 Ch l VDS = 15 V, VGS = 5 V, ID = 7.5 A Channel-2 V, VDS = 15 V VGS = 5 V, ID = -9.8 A V 98 Gate-Drain Charge Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 8.0 23 1.75 8.6 3.2 7.2 10 17 5 10 26 60 10 17 30 40 20 30 10 20 50 100 16 30 60 70 ns 12 34 nC C Gate-Source Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 71181 S-00983--Rev. A, 15-May-00 SI4828DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Vishay Siliconix CHANNEL 1 Transfer Characteristics 18 3V 18 12 12 TC = 125_C 6 25_C 6 1V 0 0 2 4 6 8 10 2V -55_C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1000 Capacitance DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.04 800 Ciss 600 0.03 VGS = 4.5 V 0.02 VGS = 10 V 400 Coss 200 Crss r 0.01 0 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Document Number: 71181 S-00983--Rev. A, 15-May-00 0.4 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 6 4 2 r DS(on) - On-Resistance (W) (Normalized) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 3 SI4828DY Vishay Siliconix New Product CHANNEL 1 On-Resistance vs. Gate-to-Source Voltage 0.10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) TJ = 150_C 10 0.06 TJ = 25_C 0.04 ID = 7.5 A 0.02 r 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 -0.0 -0.2 -0.4 -0.6 20 -0.8 -1 -50 0 -25 0 25 50 75 100 TJ - Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100 Single Pulse Power, Junction-to-Ambient 60 40 0.001 0.01 0.1 Time (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 89_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71181 S-00983--Rev. A, 15-May-00 SI4828DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix CHANNEL 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 40 50 CHANNEL 2 Transfer Characteristics 24 30 TC = 125_C 16 20 8 2V 0 0 2 4 6 8 10 3V 10 25_C -55_C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.020 4200 Capacitance r DS(on) - On-Resistance ( W ) 0.016 VGS = 4.5 V C - Capacitance (pF) 3500 Ciss 0.012 VGS = 10 V 2800 2100 0.008 1400 Coss Crss 0.004 700 0 0 8 16 24 32 40 0 0 6 12 18 24 30 ID - Drain Current (A) Document Number: 71181 S-00983--Rev. A, 15-May-00 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 5 SI4828DY Vishay Siliconix New Product CHANNEL 2 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 9.8 A VGS = 10 V ID = 9.8 A TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance (W) (Normalized) 18 27 36 45 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 9 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.05 On-Resistance vs. Gate-to-Source Voltage DS(on) - On-Resistance ( W ) 0.04 I S - Source Current (A) TJ = 150_C 10 0.03 TJ = 25_C 0.02 ID = 9.8 A 0.01 r 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 -0.0 -0.2 -0.4 -0.6 20 -0.8 -1 -50 0 -25 0 25 50 75 100 TJ - Temperature (_C) 125 150 ID = 250 mA Power (W) 80 100 Single Pulse Power, Junction-to-Ambient 60 40 0.001 0.01 0.1 Time (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 6 Document Number: 71181 S-00983--Rev. A, 15-May-00 SI4828DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix CHANNEL 2 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 89_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71181 S-00983--Rev. A, 15-May-00 www.vishay.com S FaxBack 408-970-5600 7 This datasheet has been download from: www..com Datasheets for electronics components. |
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